Literature DB >> 26924431

Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.

Atiye Pezeshki1, Seyed Hossein Hosseini Shokouh1, Tavakol Nazari1, Kyunghwan Oh1, Seongil Im1.   

Abstract

Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3) , ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W(-1) , and an external quantum efficiency of 85% under blue-light illumination.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  MoS2; heterojunctions; p-n diodes; van der Waals forces; α-MoTe2

Year:  2016        PMID: 26924431     DOI: 10.1002/adma.201504090

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  16 in total

Review 1.  Retracted Article: Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors.

Authors:  Bhaskar Kaviraj; Dhirendra Sahoo
Journal:  RSC Adv       Date:  2019-08-16       Impact factor: 4.036

Review 2.  A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.

Authors:  Hari Singh Nalwa
Journal:  RSC Adv       Date:  2020-08-19       Impact factor: 4.036

3.  Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors.

Authors:  James L Doherty; Steven G Noyce; Zhihui Cheng; Hattan Abuzaid; Aaron D Franklin
Journal:  ACS Appl Mater Interfaces       Date:  2020-07-27       Impact factor: 9.229

Review 4.  Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

Authors:  Chuanhui Gong; Yuxi Zhang; Wei Chen; Junwei Chu; Tianyu Lei; Junru Pu; Liping Dai; Chunyang Wu; Yuhua Cheng; Tianyou Zhai; Liang Li; Jie Xiong
Journal:  Adv Sci (Weinh)       Date:  2017-10-06       Impact factor: 16.806

5.  Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Authors:  Tiefeng Yang; Biyuan Zheng; Zhen Wang; Tao Xu; Chen Pan; Juan Zou; Xuehong Zhang; Zhaoyang Qi; Hongjun Liu; Yexin Feng; Weida Hu; Feng Miao; Litao Sun; Xiangfeng Duan; Anlian Pan
Journal:  Nat Commun       Date:  2017-12-04       Impact factor: 14.919

6.  High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region.

Authors:  Feng Wu; Qing Li; Peng Wang; Hui Xia; Zhen Wang; Yang Wang; Man Luo; Long Chen; Fansheng Chen; Jinshui Miao; Xiaoshuang Chen; Wei Lu; Chongxin Shan; Anlian Pan; Xing Wu; Wencai Ren; Deep Jariwala; Weida Hu
Journal:  Nat Commun       Date:  2019-10-11       Impact factor: 14.919

7.  Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.

Authors:  Junku Liu; Nan Guo; Xiaoyang Xiao; Kenan Zhang; Yi Jia; Shuyun Zhou; Yang Wu; Qunqing Li; Lin Xiao
Journal:  Nanoscale Res Lett       Date:  2017-11-22       Impact factor: 4.703

8.  Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications.

Authors:  Mengxing Sun; Dan Xie; Yilin Sun; Weiwei Li; Changjiu Teng; Jianlong Xu
Journal:  Sci Rep       Date:  2017-07-03       Impact factor: 4.379

9.  Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter.

Authors:  Junku Liu; Yangyang Wang; Xiaoyang Xiao; Kenan Zhang; Nan Guo; Yi Jia; Shuyun Zhou; Yang Wu; Qunqing Li; Lin Xiao
Journal:  Nanoscale Res Lett       Date:  2018-09-21       Impact factor: 4.703

10.  Ultrafast electron imaging of surface charge carrier dynamics at low voltage.

Authors:  Jianfeng Zhao; Osman M Bakr; Omar F Mohammed
Journal:  Struct Dyn       Date:  2020-03-30       Impact factor: 2.920

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