| Literature DB >> 26924431 |
Atiye Pezeshki1, Seyed Hossein Hosseini Shokouh1, Tavakol Nazari1, Kyunghwan Oh1, Seongil Im1.
Abstract
Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3) , ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W(-1) , and an external quantum efficiency of 85% under blue-light illumination.Keywords: MoS2; heterojunctions; p-n diodes; van der Waals forces; α-MoTe2
Year: 2016 PMID: 26924431 DOI: 10.1002/adma.201504090
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849