| Literature DB >> 26920153 |
Juhua Liu1,2, Yaohua Yi3, Yihua Zhou4, Huafei Cai5.
Abstract
The flexible hybrid transparent electrode was prepared by a two-step process: graphene film was firstly grown on Cu foil by modified thermal chemical vapor deposition (CVD) and then transferred onto indium tin oxide (ITO) electrode on the polyethylene terephthalate (PET) substrate. The quality of the graphene is characterized by various analytic techniques, including the AFM, SEM, TEM, and Raman spectroscopy. The gradient flux was found to be beneficial to decrease defect. The thickness, morphology, light transmittance, and electromechanical properties of three conductive electrodes were investigated and compared. The outcomes show that the hybrid electrode could resist mechanical force and the results are better than original ITO electrode. It may be a potential trend to apply the graphene to other conducts in the flexible transparent conductive field.Entities:
Keywords: Composite materials; Electromechanical properties; Flexible transparent electrode; Graphene
Year: 2016 PMID: 26920153 PMCID: PMC4769232 DOI: 10.1186/s11671-016-1323-y
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Fig. 1a Raman spectra for graphene films transferred to silicon substrate. Each curve shows the D peak, G peak, and 2D peak of graphene fabricated under different methane flux. b TEM image of graphene film with partially folded area on holey carbon grids. c High magnification of graphene film (TEM image); inset images show the SAED pattern. d TEM image of graphene edge
Fig. 2a Optical image of graphene/ITO hybrid electrode. Inset SEM image shows the surface structure of ITO bridges on left and right sides and the graphene film upon them. b Transmission spectra for PET substrate, ITO/PET film, graphene/ITO hybrid film on PET substrate, and the graphene/PET film. Inset photograph shows large domain of graphene upon ITO bridge on PET substrate. c AFM image of partial zone of graphene film; red arrow marks the distance of step area. Inset height change image of graphene edge marked in red arrow. d ITO edge step height measured by AFM image. Inset image shows the AFM image of ITO step and the marked distance of step area
The measured electrical data of the conductive electrode test in Hall effect measurement system
| Sheet resistance (Ω/sq) | Surface carrier concentration (cm−2) | Carrier mobility (cm2/V s) | |
|---|---|---|---|
| ITO film | 78.34 | 2.295 × 1015 | 32.01 |
| Graphene | 440.34 | 5.37 × 1013 | 1.403 × 104 |
| Graphene/ITO | 76.46 | 2.551 × 1015 | 56.35 |
| ITO/ITO | 78.25 | 2.366 × 1015 | 32.71 |
Fig. 3a The stretch process controlled by computer sets. b The bending process controlled by screw force. The bottom picture shows the bending film with the radius obtained by right scale. c AFM topography of the ITO film after bending process for 10 times. Inset image shows cross-section analysis along the lines shown in AFM image. d AFM topography of the graphene/ITO hybrid film after bending process for 10 times. Inset image shows cross-section analysis along the lines shown in AFM image
Fig. 4Electromechanical properties of three kinds of samples. a Resistance change trend versus stretch strain; inset image shows the detail data in a log scale. b Resistance change trend versus bending radius. c Sheet resistance change versus bending cyclic numbers between 0 and 20. Radius changed from flat to 0.1 cm. d Sheet resistance change versus bending cyclic numbers between 70 and 100. Radius changed from flat to 0.1 cm