Literature DB >> 26918541

The Origin of Ultralow Thermal Conductivity in InTe: Lone-Pair-Induced Anharmonic Rattling.

Manoj K Jana1, Koushik Pal2, Umesh V Waghmare2, Kanishka Biswas3.   

Abstract

Understanding the origin of intrinsically low thermal conductivity is fundamentally important to the development of high-performance thermoelectric materials, which can convert waste-heat into electricity. Herein, we report an ultralow lattice thermal conductivity (ca. 0.4 W m(-1)  K(-1) ) in mixed valent InTe (that is, In(+) In(3+) Te2 ), which exhibits an intrinsic bonding asymmetry with coexistent covalent and ionic substructures. The phonon dispersion of InTe exhibits, along with low-energy flat branches, weak instabilities associated with the rattling vibrations of In(+) atoms along the columnar ionic substructure. These weakly unstable phonons originate from the 5s(2) lone pair of the In(+) atom and are strongly anharmonic, which scatter the heat-carrying acoustic phonons through strong anharmonic phonon-phonon interactions, as evident in anomalously high mode Grüneisen parameters. A maximum thermoelectric figure of merit (z T) of about 0.9 is achieved at 600 K for the 0.3 mol % In-deficient sample, making InTe a promising material for mid-temperature thermoelectric applications.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  indium telluride; lone pairs; rattling; thermoelectrics; ultralow thermal conductivity

Year:  2016        PMID: 26918541     DOI: 10.1002/anie.201511737

Source DB:  PubMed          Journal:  Angew Chem Int Ed Engl        ISSN: 1433-7851            Impact factor:   15.336


  5 in total

Review 1.  Band Structures and Transport Properties of High-Performance Half-Heusler Thermoelectric Materials by First Principles.

Authors:  Teng Fang; Xinbing Zhao; Tiejun Zhu
Journal:  Materials (Basel)       Date:  2018-05-19       Impact factor: 3.623

2.  Bonding heterogeneity and lone pair induced anharmonicity resulted in ultralow thermal conductivity and promising thermoelectric properties in n-type AgPbBiSe3.

Authors:  Moinak Dutta; Koushik Pal; Umesh V Waghmare; Kanishka Biswas
Journal:  Chem Sci       Date:  2019-04-03       Impact factor: 9.825

3.  Near-Infrared Optical Modulation for Ultrashort Pulse Generation Employing Indium Monosulfide (InS) Two-Dimensional Semiconductor Nanocrystals.

Authors:  Tao Wang; Jin Wang; Jian Wu; Pengfei Ma; Rongtao Su; Yanxing Ma; Pu Zhou
Journal:  Nanomaterials (Basel)       Date:  2019-06-07       Impact factor: 5.076

4.  Large area growth of few-layer In2Te3 films by chemical vapor deposition and its magnetoresistance properties.

Authors:  Shaohui Zhang; Jingyang Zhang; Baosheng Liu; Xiaobo Jia; Guofu Wang; Haixin Chang
Journal:  Sci Rep       Date:  2019-07-29       Impact factor: 4.379

5.  Glassy thermal conductivity in Cs3Bi2I6Cl3 single crystal.

Authors:  Paribesh Acharyya; Tanmoy Ghosh; Koushik Pal; Kewal Singh Rana; Moinak Dutta; Diptikanta Swain; Martin Etter; Ajay Soni; Umesh V Waghmare; Kanishka Biswas
Journal:  Nat Commun       Date:  2022-08-27       Impact factor: 17.694

  5 in total

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