| Literature DB >> 26918520 |
James Semple1, Stephan Rossbauer1, Claire H Burgess2, Kui Zhao3, Lethy Krishnan Jagadamma3, Aram Amassian3, Martyn A McLachlan2, Thomas D Anthopoulos1.
Abstract
Coplanar radio frequency Schottky diodes based on solution-processed C60 and ZnO semiconductors are fabricated via adhesion-lithography. The development of a unique asymmetric nanogap electrode architecture results in devices with a high current rectification ratio (10(3) -10(6) ), low operating voltage (<3 V), and cut-off frequencies of >400 MHz. Device fabrication is scalable and can be performed at low temperatures even on plastic substrates with very high yield.Keywords: Schottky diode; nanodiodes; nanogap electrodes; plastic substrates; radio frequency diodes
Year: 2016 PMID: 26918520 DOI: 10.1002/smll.201503110
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281