Literature DB >> 26916880

Oxidative-Etching-Assisted Synthesis of Centimeter-Sized Single-Crystalline Graphene.

Wei Guo1, Feng Jing1, Jian Xiao1, Ce Zhou2, Yuanwei Lin2, Shuai Wang1.   

Abstract

Centimeter-sized single-crystalline graphene is obtained by an oxidative-etching-assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H2 O vapor in commercial H2 and precisely introducing additional O2 , the graphene nucleation density can be well controlled.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  chemical vapor deposition; graphene; oxidative etching; single crystalline

Year:  2016        PMID: 26916880     DOI: 10.1002/adma.201503705

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

Review 1.  The Way towards Ultrafast Growth of Single-Crystal Graphene on Copper.

Authors:  Zhihong Zhang; Xiaozhi Xu; Lu Qiu; Shaoxin Wang; Tianwei Wu; Feng Ding; Hailin Peng; Kaihui Liu
Journal:  Adv Sci (Weinh)       Date:  2017-05-30       Impact factor: 16.806

2.  On the Dynamics of Intrinsic Carbon in Copper during the Annealing Phase of Chemical Vapor Deposition Growth of Graphene.

Authors:  M Hadi Khaksaran; Ismet I Kaya
Journal:  ACS Omega       Date:  2019-06-03

3.  Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphene.

Authors:  Zewdu M Gebeyehu; Aloïs Arrighi; Marius V Costache; Clivia M Sotomayor-Torres; Maria J Esplandiu; Sergio O Valenzuela
Journal:  RSC Adv       Date:  2018-02-21       Impact factor: 3.361

  3 in total

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