Flexible resistive switching memory with a Ni/CuO x /Ni structure using an electrochemical deposition process.

Flexible resistive switching memory (ReRAM) devices were fabricated with a Ni/CuO x /Ni structure. Fabrication involved simple and low-cost electrochemical deposition of electrodes and resistive switching layers on a polyethylene terephthalate substrate. The devices exhibited reproducible and reliable ReRAM characteristics. Bipolar resistive switching was observed in flexible Ni/CuO x /Ni-based ReRAM devices with low operation voltages. The reliability of the devices was confirmed by data retention, endurance, and cyclic bending measurements. The processes for fabrication of flexible ReRAM devices were based on simple-solution, bottom-up growth and they can be performed at low temperatures. Therefore, the methods presented in this work could be a viable solution for fabricating flexible non-volatile memory devices in the future.