| Literature DB >> 26871351 |
H Schmidt1,2, I Yudhistira1,2, L Chu1,2, A H Castro Neto1,2, B Özyilmaz1,2, S Adam1,2,3, G Eda1,2,4.
Abstract
Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudospin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak antilocalization in highly n-doped monolayer MoS_{2}. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. At low temperatures and high carrier densities, the spin lifetime is inversely proportional to momentum relaxation time; this indicates that spin relaxation occurs via a Dyakonov-Perel mechanism.Entities:
Year: 2016 PMID: 26871351 DOI: 10.1103/PhysRevLett.116.046803
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161