| Literature DB >> 26865561 |
Serim Ilday1, F Ömer Ilday, René Hübner2, Ty J Prosa3, Isabelle Martin3, Gizem Nogay4, Ismail Kabacelik5, Zoltan Mics6, Mischa Bonn6, Dmitry Turchinovich6, Hande Toffoli4, Daniele Toffoli7, David Friedrich2, Bernd Schmidt2, Karl-Heinz Heinig2, Rasit Turan4.
Abstract
Multiscale self-assembly is ubiquitous in nature but its deliberate use to synthesize multifunctional three-dimensional materials remains rare, partly due to the notoriously difficult problem of controlling topology from atomic to macroscopic scales to obtain intended material properties. Here, we propose a simple, modular, noncolloidal methodology that is based on exploiting universality in stochastic growth dynamics and driving the growth process under far-from-equilibrium conditions toward a preplanned structure. As proof of principle, we demonstrate a confined-but-connected solid structure, comprising an anisotropic random network of silicon quantum-dots that hierarchically self-assembles from the atomic to the microscopic scales. First, quantum-dots form to subsequently interconnect without inflating their diameters to form a random network, and this network then grows in a preferential direction to form undulated and branching nanowire-like structures. This specific topology simultaneously achieves two scale-dependent features, which were previously thought to be mutually exclusive: good electrical conduction on the microscale and a bandgap tunable over a range of energies on the nanoscale.Entities:
Keywords: Si; hierarchical; multiscale; random network; self-assembly; stochastic deposition
Year: 2016 PMID: 26865561 DOI: 10.1021/acs.nanolett.5b05158
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189