Literature DB >> 26857833

Sandwiched assembly of ZnO nanowires between graphene layers for a self-powered and fast responsive ultraviolet photodetector.

Buddha Deka Boruah1, Anwesha Mukherjee, Abha Misra.   

Abstract

A heterostructure of graphene and zinc oxide (ZnO) nanowires (NWs) is fabricated by sandwiching an array of ZnO NWs between two graphene layers for an ultraviolet (UV) photodetector. This unique structure allows NWs to be in direct contact with the graphene layers, minimizing the effect of the substrate or metal electrodes. In this device, graphene layers act as highly conducting electrodes with a high mobility of the generated charge carriers. An excellent sensitivity is demonstrated towards UV illumination, with a reversible photoresponse even for a short period of UV illumination. Response and recovery times of a few milliseconds demonstrated a much faster photoresponse than most of the conventional ZnO nanostructure-based photodetectors. It is shown that the generation of a built-in electric field between the interface of graphene and ZnO NWs effectively contributes to the separation of photogenerated electron-hole pairs for photocurrent generation without applying any external bias. Upon application of external bias voltage, the electric field further increases the drift velocity of photogenerated electrons by reducing the charge recombination rates, and results in an enhancement of the photocurrent. Therefore, the graphene-based heterostructure (G/ZnO NW/G) opens avenues to constructing a novel heterostructure with a combination of two functionally dissimilar materials.

Entities:  

Year:  2016        PMID: 26857833     DOI: 10.1088/0957-4484/27/9/095205

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  5 in total

Review 1.  Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors.

Authors:  Buddha Deka Boruah
Journal:  Nanoscale Adv       Date:  2019-04-02

2.  Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection.

Authors:  Yi-Lin Sun; Dan Xie; Meng-Xing Sun; Chang-Jiu Teng; Liu Qian; Ruo-Song Chen; Lan Xiang; Tian-Ling Ren
Journal:  Sci Rep       Date:  2018-03-23       Impact factor: 4.379

Review 3.  Graphene-Based Semiconductor Heterostructures for Photodetectors.

Authors:  Dong Hee Shin; Suk-Ho Choi
Journal:  Micromachines (Basel)       Date:  2018-07-13       Impact factor: 2.891

4.  Transformation from Film to Nanorod via a Sacrifical Layer: Pulsed Laser Deposition of ZnO for Enhancing Photodetector Performance.

Authors:  Sin-Liang Ou; Fei-Peng Yu; Dong-Sing Wuu
Journal:  Sci Rep       Date:  2017-10-27       Impact factor: 4.379

5.  SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors.

Authors:  Xiangyang Li; Ling Li; Huancheng Zhao; Shuangchen Ruan; Wenfei Zhang; Peiguang Yan; Zhenhua Sun; Huawei Liang; Keyu Tao
Journal:  Nanomaterials (Basel)       Date:  2019-09-15       Impact factor: 5.076

  5 in total

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