Literature DB >> 26854333

Phase-Change Memory Materials by Design: A Strain Engineering Approach.

Xilin Zhou1, Janne Kalikka1, Xinglong Ji2, Liangcai Wu2, Zhitang Song2, Robert E Simpson1.   

Abstract

Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  interfacial phase-change memory; phase-change materials; strain engineering; van der Waals heterostructures

Year:  2016        PMID： 26854333     DOI： 10.1002/adma.201505865

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  6 in total

1.  Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb2Te3 superlattices.

Authors:  Zhe Yang; Ming Xu; Xiaomin Cheng; Hao Tong; Xiangshui Miao
Journal:  Sci Rep       Date:  2017-12-11       Impact factor: 4.379

2.  Pt Modified Sb2Te3 Alloy Ensuring High-Performance Phase Change Memory.

Authors:  Yang Qiao; Jin Zhao; Haodong Sun; Zhitang Song; Yuan Xue; Jiao Li; Sannian Song
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

3.  Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices.

Authors:  Xiaoming Yu; John Robertson
Journal:  Sci Rep       Date:  2016-11-17       Impact factor: 4.379

4.  Suppression for an intermediate phase in ZnSb films by NiO-doping.

Authors:  Chao Li; Guoxiang Wang; Dongfeng Qi; Daotian Shi; Xianghua Zhang; Hui Wang
Journal:  Sci Rep       Date:  2017-08-17       Impact factor: 4.379

Review 5.  A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

Authors:  Jiang-Jing Wang; Ya-Zhi Xu; Riccardo Mazzarello; Matthias Wuttig; Wei Zhang
Journal:  Materials (Basel)       Date:  2017-07-27       Impact factor: 3.623

6.  Morphology and Electric Conductance Change Induced by Voltage Pulse Excitation in (GeTe)2/Sb2Te3 Superlattices.

Authors:  Leonid Bolotov; Yuta Saito; Tetsuya Tada; Junji Tominaga
Journal:  Sci Rep       Date:  2016-09-13       Impact factor: 4.379
  6 in total

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