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Literature DB >> 26841275

Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals.

Masaro Yoshida¹, Takahiko Iizuka¹, Yu Saito¹, Masaru Onga¹, Ryuji Suzuki¹, Yijin Zhang¹, Yoshihiro Iwasa^1,2, Sunao Shimizu².

Abstract

We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been chemically accessed. The maximized values of power factor are one-order larger than that obtained by changing chemical composition, reflecting the clean nature of electrostatic doping.

Keywords: Thermopower; electric double-layer transistor (EDLT); on-chip thermometer; thermoelectric power factor; tungsten diselenide (WSe2)

Year: 2016 PMID： 26841275 DOI： 10.1021/acs.nanolett.6b00075

Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189

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Cited

7 in total

1. High thermoelectricpower factor in graphene/hBN devices.

Authors: Junxi Duan; Xiaoming Wang; Xinyuan Lai; Guohong Li; Kenji Watanabe; Takashi Taniguchi; Mona Zebarjadi; Eva Y Andrei
Journal: Proc Natl Acad Sci U S A Date: 2016-11-23 Impact factor: 11.205

2. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating.

Authors: Feng Qin; Toshiya Ideue; Wu Shi; Yijin Zhang; Ryuji Suzuki; Masaro Yoshida; Yu Saito; Yoshihiro Iwasa
Journal: J Vis Exp Date: 2018-04-12 Impact factor: 1.355

3. Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization.

Authors: Jing Wu; Yanpeng Liu; Yi Liu; Yongqing Cai; Yunshan Zhao; Hong Kuan Ng; Kenji Watanabe; Takashi Taniguchi; Gang Zhang; Cheng-Wei Qiu; Dongzhi Chi; A H Castro Neto; John T L Thong; Kian Ping Loh; Kedar Hippalgaonkar
Journal: Proc Natl Acad Sci U S A Date: 2020-06-10 Impact factor: 11.205

Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals.

1. High thermoelectricpower factor in graphene/hBN devices.

2. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating.

3. Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization.

4. Electrical mapping of thermoelectric power factor in WO₃ thin film.

5. Thickness-controlled electronic structure and thermoelectric performance of ultrathin SnS2 nanosheets.

6. Giant thermoelectric power factor in ultrathin FeSe superconductor.

7. Oxidation-induced thermopower inversion in nanocrystalline SnSe thin film.