Literature DB >> 26833926

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.

Suhas Kumar1,2, Catherine E Graves1, John Paul Strachan1, Emmanuelle Merced Grafals1, Arthur L David Kilcoyne3, Tolek Tyliszczak3, Johanna Nelson Weker4, Yoshio Nishi2, R Stanley Williams1.   

Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  RRAM; memristors; oxygen migration; spectromicroscopy; thermophoresis

Year:  2016        PMID： 26833926     DOI： 10.1002/adma.201505435

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  7 in total

1.  Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.

Authors:  Christoph Baeumer; Christoph Schmitz; Astrid Marchewka; David N Mueller; Richard Valenta; Johanna Hackl; Nicolas Raab; Steven P Rogers; M Imtiaz Khan; Slavomir Nemsak; Moonsub Shim; Stephan Menzel; Claus Michael Schneider; Rainer Waser; Regina Dittmann
Journal:  Nat Commun       Date:  2016-08-19       Impact factor: 14.919

2.  Physical origins of current and temperature controlled negative differential resistances in NbO2.

Authors:  Suhas Kumar; Ziwen Wang; Noraica Davila; Niru Kumari; Kate J Norris; Xiaopeng Huang; John Paul Strachan; David Vine; A L David Kilcoyne; Yoshio Nishi; R Stanley Williams
Journal:  Nat Commun       Date:  2017-09-22       Impact factor: 14.919

3.  The Resistive Switching Characteristics in ZrO₂ and Its Filamentary Conduction Behavior.

Authors:  Chun-Hung Lai; Hung-Wei Chen; Chih-Yi Liu
Journal:  Materials (Basel)       Date:  2016-07-08       Impact factor: 3.623

4.  Separation of current density and electric field domains caused by nonlinear electronic instabilities.

Authors:  Suhas Kumar; R Stanley Williams
Journal:  Nat Commun       Date:  2018-05-23       Impact factor: 14.919

5.  Stateful characterization of resistive switching TiO2 with electron beam induced currents.

Authors:  Brian D Hoskins; Gina C Adam; Evgheni Strelcov; Nikolai Zhitenev; Andrei Kolmakov; Dmitri B Strukov; Jabez J McClelland
Journal:  Nat Commun       Date:  2017-12-07       Impact factor: 14.919

6.  Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection.

Authors:  Subhranu Samanta; Sheikh Ziaur Rahaman; Anisha Roy; Surajit Jana; Somsubhra Chakrabarti; Rajeswar Panja; Sourav Roy; Mrinmoy Dutta; Sreekanth Ginnaram; Amit Prakash; Siddheswar Maikap; Hsin-Ming Cheng; Ling-Na Tsai; Jian-Tai Qiu; Samit K Ray
Journal:  Sci Rep       Date:  2017-09-11       Impact factor: 4.379

7.  Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory.

Authors:  Kwan-Jun Heo; Han-Sang Kim; Jae-Yun Lee; Sung-Jin Kim
Journal:  Sci Rep       Date:  2020-06-09       Impact factor: 4.379
  7 in total

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