Literature DB >> 26833133

Unexpected Giant-Gap Quantum Spin Hall Insulator in Chemically Decorated Plumbene Monolayer.

Hui Zhao1, Chang-wen Zhang1, Wei-xiao Ji1, Run-wu Zhang1, Sheng-shi Li2, Shi-shen Yan2, Bao-min Zhang1, Ping Li1, Pei-ji Wang1.   

Abstract

Quantum spin Hall (QSH) effect of two-dimensional (2D) materials features edge states that are topologically protected from backscattering by time-reversal symmetry. However, the major obstacles to the application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Here, we predict a novel class of 2D QSH insulators in X-decorated plumbene monolayers (PbX; X = H, F, Cl, Br, I) with extraordinarily giant bulk gaps from 1.03 eV to a record value of 1.34 eV. The topological characteristic of PbX mainly originates from s-p(x,y) band inversion related to the lattice symmetry, while the effect of spin-orbital coupling (SOC) is only to open up a giant gap. Their QSH states are identified by nontrivial topological invariant Z2 = 1, as well as a single pair of topologically protected helical edge states locating inside the bulk gap. Noticeably, the QSH gaps of PbX are tunable and robust via external strain. We also propose high-dielectric-constant BN as an ideal substrate for the experimental realization of PbX, maintaining its nontrivial topology. These novel QSH insulators with giant gaps are a promising platform to enrich topological phenomena and expand potential applications at high temperature.

Entities:  

Year:  2016        PMID: 26833133      PMCID: PMC4735859          DOI: 10.1038/srep20152

Source DB:  PubMed          Journal:  Sci Rep        ISSN: 2045-2322            Impact factor:   4.379


  25 in total

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Journal:  Phys Rev Lett       Date:  2005-11-23       Impact factor: 9.161

4.  Quantum spin hall insulator state in HgTe quantum wells.

Authors:  Markus König; Steffen Wiedmann; Christoph Brüne; Andreas Roth; Hartmut Buhmann; Laurens W Molenkamp; Xiao-Liang Qi; Shou-Cheng Zhang
Journal:  Science       Date:  2007-09-20       Impact factor: 47.728

5.  Quantum spin Hall effect in inverted type-II semiconductors.

Authors:  Chaoxing Liu; Taylor L Hughes; Xiao-Liang Qi; Kang Wang; Shou-Cheng Zhang
Journal:  Phys Rev Lett       Date:  2008-06-11       Impact factor: 9.161

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Journal:  Phys Rev Lett       Date:  2009-07-10       Impact factor: 9.161

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Journal:  Science       Date:  2009-06-11       Impact factor: 47.728

8.  Projector augmented-wave method.

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Journal:  Phys Rev B Condens Matter       Date:  1994-12-15

9.  Robust helical edge transport in gated InAs/GaSb bilayers.

Authors:  Lingjie Du; Ivan Knez; Gerard Sullivan; Rui-Rui Du
Journal:  Phys Rev Lett       Date:  2015-03-04       Impact factor: 9.161

10.  Quantum anomalous Hall and quantum spin-Hall phases in flattened Bi and Sb bilayers.

Authors:  Kyung-Hwan Jin; Seung-Hoon Jhi
Journal:  Sci Rep       Date:  2015-02-12       Impact factor: 4.379

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  17 in total

1.  Tunable Electronic and Topological Properties of Germanene by Functional Group Modification.

Authors:  Ceng-Ceng Ren; Shu-Feng Zhang; Wei-Xiao Ji; Chang-Wen Zhang; Ping Li; Pei-Ji Wang
Journal:  Nanomaterials (Basel)       Date:  2018-03-06       Impact factor: 5.076

2.  Unveiling the effect of 2D silagraphene structural diversity on electronic properties: DFT, DOS, and ELF studies.

Authors:  Hassan Chataoui; Lahoucine Bahsis; Hafid Anane; Abdellah Jarid; Soufiane El Houssame
Journal:  J Mol Model       Date:  2022-08-08       Impact factor: 2.172

3.  Magnetic properties of 3d transition metal (Sc-Ni) doped plumbene.

Authors:  Daniel Hashemi; Hideo Iizuka
Journal:  RSC Adv       Date:  2020-02-14       Impact factor: 3.361

4.  Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure.

Authors:  Shun-Yu Huang; Hong-Lin Li; Cheong-Wei Chong; Yu-Ying Chang; Min-Kai Lee; Jung-Chun-Andrew Huang
Journal:  Sci Rep       Date:  2018-01-08       Impact factor: 4.379

5.  Unconventional band inversion and intrinsic quantum spin Hall effect in functionalized group-V binary films.

Authors:  Sheng-Shi Li; Wei-Xiao Ji; Ping Li; Shu-Jun Hu; Tie Zhou; Chang-Wen Zhang; Shi-Shen Yan
Journal:  Sci Rep       Date:  2017-07-21       Impact factor: 4.379

6.  New type of quantum spin Hall insulators in hydrogenated PbSn thin films.

Authors:  Liang Liu; Hongwei Qin; Jifan Hu
Journal:  Sci Rep       Date:  2017-02-20       Impact factor: 4.379

7.  A new class of large band gap quantum spin hall insulators: 2D fluorinated group-IV binary compounds.

Authors:  J E Padilha; R B Pontes; T M Schmidt; R H Miwa; A Fazzio
Journal:  Sci Rep       Date:  2016-05-23       Impact factor: 4.379

8.  Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film.

Authors:  Sheng-Shi Li; Wei-Xiao Ji; Chang-Wen Zhang; Shu-Jun Hu; Ping Li; Pei-Ji Wang; Bao-Min Zhang; Chong-Long Cao
Journal:  Sci Rep       Date:  2016-03-21       Impact factor: 4.379

9.  Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator.

Authors:  Run-wu Zhang; Chang-wen Zhang; Wei-xiao Ji; Sheng-shi Li; Shi-shen Yan; Ping Li; Pei-ji Wang
Journal:  Sci Rep       Date:  2016-02-17       Impact factor: 4.379

10.  Conformal QED in two-dimensional topological insulators.

Authors:  Natália Menezes; Giandomenico Palumbo; Cristiane Morais Smith
Journal:  Sci Rep       Date:  2017-10-26       Impact factor: 4.379

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