| Literature DB >> 26829168 |
Fabio Isa1, Marco Salvalaglio2, Yadira Arroyo Rojas Dasilva3, Mojmír Meduňa4,5, Michael Barget2, Arik Jung1, Thomas Kreiliger1, Giovanni Isella6, Rolf Erni3, Fabio Pezzoli2, Emiliano Bonera2, Philippe Niedermann7, Pierangelo Gröning3, Francesco Montalenti2, Hans von Känel1.
Abstract
Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001).Entities:
Keywords: SiGe; heteroepitaxy; heterostructures; strain relaxation; substrate patterning
Year: 2015 PMID： 26829168 DOI： 10.1002/adma.201504029
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849