| Literature DB >> 26821265 |
Cory J Flynn1, Shannon M McCullough1, EunBi Oh1, Lesheng Li1, Candy C Mercado2, Byron H Farnum1, Wentao Li1, Carrie L Donley3, Wei You1, Arthur J Nozik2,4, James R McBride5, Thomas J Meyer1, Yosuke Kanai1, James F Cahoon1.
Abstract
For nanomaterials, surface chemistry can dictate fundamental material properties, including charge-carrier lifetimes, doping levels, and electrical mobilities. In devices, surface defects are usually the key limiting factor for performance, particularly in solar-energy applications. Here, we develop a strategy to uniformly and selectively passivate defect sites in semiconductor nanomaterials using a vapor-phase process termed targeted atomic deposition (TAD). Because defects often consist of atomic vacancies and dangling bonds with heightened reactivity, we observe-for the widely used p-type cathode nickel oxide-that a volatile precursor such as trimethylaluminum can undergo a kinetically limited selective reaction with these sites. The TAD process eliminates all measurable defects in NiO, leading to a nearly 3-fold improvement in the performance of dye-sensitized solar cells. Our results suggest that TAD could be implemented with a range of vapor-phase precursors and be developed into a general strategy to passivate defects in zero-, one-, and two-dimensional nanomaterials.Entities:
Keywords: DFT+U calculations; atomic layer deposition; dye-sensitized solar cell; nickel oxide; p-type metal oxide
Year: 2016 PMID: 26821265 DOI: 10.1021/acsami.6b01090
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229