Literature DB >> 26808483

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

Xiaochi Liu1, Deshun Qu1, Jungjin Ryu1, Faisal Ahmed1, Zheng Yang1, Daeyeong Lee1, Won Jong Yoo1.   

Abstract

A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  MoS2; chemical doping; contact resistance; p-type; transistors

Year:  2016        PMID： 26808483     DOI： 10.1002/adma.201505154

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  14 in total

1.  P-type electrical contacts for 2D transition-metal dichalcogenides.

Authors:  Yan Wang; Jong Chan Kim; Yang Li; Kyung Yeol Ma; Seokmo Hong; Minsu Kim; Hyeon Suk Shin; Hu Young Jeong; Manish Chhowalla
Journal:  Nature       Date:  2022-08-01       Impact factor: 69.504

2.  Spatial Mapping of Electrostatic Fields in 2D Heterostructures.

Authors:  Akshay A Murthy; Stephanie M Ribet; Teodor K Stanev; Pufan Liu; Kenji Watanabe; Takashi Taniguchi; Nathaniel P Stern; Roberto Dos Reis; Vinayak P Dravid
Journal:  Nano Lett       Date:  2021-08-27       Impact factor: 12.262

3.  Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering.

Authors:  Siyuan Zhang; Son T Le; Curt A Richter; Christina A Hacker
Journal:  Appl Phys Lett       Date:  2019       Impact factor: 3.791

4.  Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Authors:  Xing Zhou; Qi Zhang; Lin Gan; Huiqiao Li; Jie Xiong; Tianyou Zhai
Journal:  Adv Sci (Weinh)       Date:  2016-06-22       Impact factor: 16.806

5.  A two-dimensional Fe-doped SnS2 magnetic semiconductor.

Authors:  Bo Li; Tao Xing; Mianzeng Zhong; Le Huang; Na Lei; Jun Zhang; Jingbo Li; Zhongming Wei
Journal:  Nat Commun       Date:  2017-12-05       Impact factor: 14.919

6.  Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.

Authors:  Nengjie Huo; Gerasimos Konstantatos
Journal:  Nat Commun       Date:  2017-09-18       Impact factor: 14.919

Review 7.  Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides.

Authors:  José Ramón Durán Retamal; Dharmaraj Periyanagounder; Jr-Jian Ke; Meng-Lin Tsai; Jr-Hau He
Journal:  Chem Sci       Date:  2018-09-24       Impact factor: 9.825

8.  Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity.

Authors:  Xing Zhou; Xiaozong Hu; Bao Jin; Jing Yu; Kailang Liu; Huiqiao Li; Tianyou Zhai
Journal:  Adv Sci (Weinh)       Date:  2018-06-21       Impact factor: 16.806

9.  Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate.

Authors:  Salvatore Ethan Panasci; Emanuela Schilirò; Giuseppe Greco; Marco Cannas; Franco M Gelardi; Simonpietro Agnello; Fabrizio Roccaforte; Filippo Giannazzo
Journal:  ACS Appl Mater Interfaces       Date:  2021-06-24       Impact factor: 10.383

10.  Impact ionization by hot carriers in a black phosphorus field effect transistor.

Authors:  Faisal Ahmed; Young Duck Kim; Zheng Yang; Pan He; Euyheon Hwang; Hyunsoo Yang; James Hone; Won Jong Yoo
Journal:  Nat Commun       Date:  2018-08-24       Impact factor: 14.919
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