| Literature DB >> 26788662 |
D Pan1, D X Fan2, N Kang2, J H Zhi2, X Z Yu1, H Q Xu2, J H Zhao1.
Abstract
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana Fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here, we report on a new route toward growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ∼10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes toward the development of InSb-based devices for applications in nanoelectronics, optoelectronics, and quantum electronics and for the study of fundamental physical phenomena.Entities:
Keywords: Free-standing layered InSb; mobility; molecular-beam epitaxy; single-crystalline
Year: 2016 PMID: 26788662 DOI: 10.1021/acs.nanolett.5b04845
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189