Literature DB >> 26780377

Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading.

Thomas Bathon1, Simona Achilli2, Paolo Sessi1, Vladimir Andreevich Golyashov3, Konstantin Aleksandrovich Kokh4,5,6, Oleg Evgenievich Tereshchenko3,5,6, Matthias Bode1,7.   

Abstract

A Bi2Te3 single crystal is grown with the modified Bridgman technique. The crystal has a nominal composition with a Te content of 61 mol% resulting in the existence of two distinct regions, p- and n-doped, respectively; color-coded tunneling spectra are taken over 60 nm at the transition region.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  density functional theory; p-n junctions; scanning tunneling microscopy; topological insulators; transport

Year:  2016        PMID: 26780377     DOI: 10.1002/adma.201504771

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySey.

Authors:  Ngoc Han Tu; Yoichi Tanabe; Yosuke Satake; Khuong Kim Huynh; Katsumi Tanigaki
Journal:  Nat Commun       Date:  2016-12-09       Impact factor: 14.919

2.  Solar energy converters based on multi-junction photoemission solar cells.

Authors:  O E Tereshchenko; V A Golyashov; A A Rodionov; I B Chistokhin; N V Kislykh; A V Mironov; V V Aksenov
Journal:  Sci Rep       Date:  2017-11-23       Impact factor: 4.379

  2 in total

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