Literature DB >> 26757398

Investigation into the Sensing Process of High-Performance H2S Sensors Based on Polymer Transistors.

Aifeng Lv1, Ming Wang2, Yandong Wang1, Zhishan Bo2, Lifeng Chi3,4.   

Abstract

Herein a H2S sensor based on a polymer field-effect transistor is reported and the sensor shows high sensitivity, excellent selectivity, fast response, and good operational stability. A concentration as low as 1 ppb H2 is detectable, which is to date the most sensitive H2S sensor based on organic semiconducting film. Thinning the thickness of active layer does not necessarily improve the sensitivity, but rather leads to the reduction of performance if the thickness is too low. Further analysis proposes a mechanism that the changing rate of absorption and desorption of H2S molecules is different when the thickness of active layer varies, indicating the necessity for thickness optimization.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  H2S; organic field-effect transistors; polymers; sensing process; sensors

Year:  2016        PMID: 26757398     DOI: 10.1002/chem.201504196

Source DB:  PubMed          Journal:  Chemistry        ISSN: 0947-6539            Impact factor:   5.236


  1 in total

Review 1.  Gas Sensors Based on Polymer Field-Effect Transistors.

Authors:  Aifeng Lv; Yong Pan; Lifeng Chi
Journal:  Sensors (Basel)       Date:  2017-01-22       Impact factor: 3.576

  1 in total

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