| Literature DB >> 26755196 |
Jong-Soo Rhyee1, Junyeon Kwon2, Piyush Dak3, Jin Hee Kim1, Seung Min Kim4, Jozeph Park2, Young Ki Hong2, Won Geun Song2, Inturu Omkaram2, Muhammad A Alam3, Sunkook Kim2.
Abstract
Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.Entities:
Keywords: MoSe2; insulating substrates; single-crystals; thin-film transistors; transition metal dichalcogenides
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Year: 2016 PMID: 26755196 DOI: 10.1002/adma.201504789
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849