| Literature DB >> 26741653 |
Hark Jin Kim1, Junhyeok Seo1, Michael J Rose1.
Abstract
We report the fabrication of a {semiconductor}|{metal oxide}|{molecular catalyst} construct for the photogeneration of dihydrogen (H2) under illumination, including band-edge modulation of the semiconductor electrode depending on the identity of Si(111)-R and the metal oxide. Briefly, a synergistic band-edge modulation is observed upon (i) the introduction of a p-Si|n-AZO heterojunction and (ii) introduction of an organic dimethoxyphenyl (diMeOPh) group at the heterojunction interface; the AZO also serves as a transparent and conductive conduit, which was capped with an ultrathin layer (20 Å) of amorphous TiO2 for stability. A phosphonate-appended PNP ligand and its Ni complex were then adsorbed to the p/n heterojunction for photoelectrochemical H2 generation (figures of merit: Vonset ≈ + 0.03 V vs NHE, Jmax ≈ 8 mA cm(-2) at 60 mM TsOH).Entities:
Keywords: AZO; Ni-PNP; Si(111) semiconductor; TiO2; band-edge modulation; photoelectrochemical H2 evolution
Year: 2016 PMID: 26741653 DOI: 10.1021/acsami.5b09902
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229