| Literature DB >> 26732277 |
Abderrahmane Benchirouf1, Christian Müller2, Olfa Kanoun2.
Abstract
In this paper, we propose strain-sensitive thin films based on chemically reduced graphene oxide (GO) and multi-walled carbon nanotubes (MWCNTs) without adding any further surfactants. In spite of the insulating properties of the thin-film-based GO due to the presence functional groups such as hydroxyl, epoxy, and carbonyl groups in its atomic structure, a significant enhancement of the film conductivity was reached by chemical reduction with hydro-iodic acid. By optimizing the MWCNT content, a significant improvement of electrical and mechanical thin film sensitivity is realized. The optical properties and the morphology of the prepared thin films were studied using ultraviolet-visible spectroscopy (UV-Vis) and scanning electron microscope (SEM). The UV-Vis spectra showed the ability to tune the band gap of the GO by changing the MWCNT content, whereas the SEM indicated that the MWCNTs were well dissolved and coated by the GO. Investigations of the piezoresistive properties of the hybrid nanocomposite material under mechanical load show a linear trend between the electrical resistance and the applied strain. A relatively high gauge factor of 8.5 is reached compared to the commercial metallic strain gauges. The self-assembled hybrid films exhibit outstanding properties in electric conductivity, mechanical strength, and strain sensitivity, which provide a high potential for use in strain-sensing applications.Entities:
Keywords: Chemical reduction; Graphene oxide; Multi-walled carbon nanotubes; Piezoresistivity; Strain sensor
Year: 2016 PMID: 26732277 PMCID: PMC4701710 DOI: 10.1186/s11671-015-1216-5
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Fig. 1Fabrication process. a Aqueous dispersion of GO:MWCNT. b Physical liquid deposition of thin film
Fig. 2UV-Vis spectra of MWCNT dissolved in GO. (a) At different concentrations. (b) Absorbance coefficient at 600 nm
Fig. 3Tauc plot of different MWCNT content dissolved in 0.5 wt.% GO
Fig. 4SEM images of a 0.5 wt.% rGO, b 0.01 wt.% rGO:MWCNT, c 0.025 wt.% rGO:MWCNT, and d 0.5 wt.% rGO:MWCNT
Fig. 5Chemically reduced thin film DC-ohmic resistance as a function of the MWCNT content dispersed in 0.5 wt.% GO
Fig. 6Resistance-strain relationship of rGO:MWCNT under tension cycle. a 0.01 wt.% MWCNT, b 0.02 MWCNT, and c 0.05 wt.% MWCNT