Literature DB >> 26727653

Tunable Graphene-GaSe Dual Heterojunction Device.

Wonjae Kim1, Changfeng Li1, Ferney A Chaves2, David Jiménez2, Raul D Rodriguez3, Jannatul Susoma1, Matthias A Fenner4, Harri Lipsanen1, Juha Riikonen1.   

Abstract

A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  GaSe; Schottky; graphene; heterojunctions; two-dimensional materials

Year:  2016        PMID： 26727653     DOI： 10.1002/adma.201504514

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  4 in total

1.  Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Authors:  Xing Zhou; Qi Zhang; Lin Gan; Huiqiao Li; Jie Xiong; Tianyou Zhai
Journal:  Adv Sci (Weinh)       Date:  2016-06-22       Impact factor: 16.806

2.  High-Quality GaSe Single Crystal Grown by the Bridgman Method.

Authors:  Tao Wang; Jie Li; Qinghua Zhao; Ziang Yin; Yinghan Zhang; Bingqi Chen; Yong Xie; Wanqi Jie
Journal:  Materials (Basel)       Date:  2018-01-24       Impact factor: 3.623

3.  Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets.

Authors:  Duan Zhang; Tanhua Jia; Ran Dong; Dengyun Chen
Journal:  Materials (Basel)       Date:  2017-11-08       Impact factor: 3.623

4.  Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices.

Authors:  Wonjae Kim; Sanna Arpiainen; Hui Xue; Miika Soikkeli; Mei Qi; Zhipei Sun; Harri Lipsanen; Ferney A Chaves; David Jiménez; Mika Prunnila
Journal:  ACS Appl Nano Mater       Date:  2018-07-31
  4 in total

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