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Literature DB >> 26707841

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.

Hsiao-Yu Chang¹, Maruthi Nagavalli Yogeesh¹, Rudresh Ghosh¹, Amritesh Rai¹, Atresh Sanne¹, Shixuan Yang², Nanshu Lu², Sanjay Kumar Banerjee¹, Deji Akinwande¹.

Abstract

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.

Entities: Chemical

Keywords: 2D materials; CVD-growth; flexible electronics; molybdenum disulfide; radio frequency

Year: 2015 PMID： 26707841 DOI： 10.1002/adma.201504309

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

16 in total

1. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

Authors: Di Wu; Xiao Li; Lan Luan; Xiaoyu Wu; Wei Li; Maruthi N Yogeesh; Rudresh Ghosh; Zhaodong Chu; Deji Akinwande; Qian Niu; Keji Lai
Journal: Proc Natl Acad Sci U S A Date: 2016-07-21 Impact factor: 11.205

2. Single Crystalline Ultrathin Nickel-Cobalt Alloy Nanosheets Array for Direct Hydrazine Fuel Cells.

Authors: Guang Feng; Yun Kuang; Pengsong Li; Nana Han; Ming Sun; Guoxin Zhang; Xiaoming Sun
Journal: Adv Sci (Weinh) Date: 2016-12-20 Impact factor: 16.806

3. Zero-static power radio-frequency switches based on MoS₂ atomristors.

Authors: Myungsoo Kim; Ruijing Ge; Xiaohan Wu; Xing Lan; Jesse Tice; Jack C Lee; Deji Akinwande
Journal: Nat Commun Date: 2018-06-28 Impact factor: 14.919

Review 4. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Authors: Sohail Ahmed; Jiabao Yi
Journal: Nanomicro Lett Date: 2017-08-16

5. Effects of Charge Trapping at the MoS₂-SiO₂ Interface on the Stability of Subthreshold Swing of MoS₂ Field Effect Transistors.

Authors: Xinnan Huang; Yao Yao; Songang Peng; Dayong Zhang; Jingyuan Shi; Zhi Jin
Journal: Materials (Basel) Date: 2020-06-28 Impact factor: 3.623

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.

1. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

2. Single Crystalline Ultrathin Nickel-Cobalt Alloy Nanosheets Array for Direct Hydrazine Fuel Cells.

3. Zero-static power radio-frequency switches based on MoS₂ atomristors.

Review 4. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

5. Effects of Charge Trapping at the MoS₂-SiO₂ Interface on the Stability of Subthreshold Swing of MoS₂ Field Effect Transistors.

6. Scalable high performance radio frequency electronics based on large domain bilayer MoS₂.

7. Probing the Field-Effect Transistor with Monolayer MoS₂ Prepared by APCVD.

8. Improved optical performance of multi-layer MoS₂ phototransistor with see-through metal electrode.

9. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS₂ Transistors.

10. 2D titanium carbide (MXene) for wireless communication.