| Literature DB >> 26690156 |
Usman Latif1, Franz L Dickert2.
Abstract
Graphene, a two dimensional structure of carbon atoms, has been widely used as a material for gas sensing applications because of its large surface area, excellent conductivity, and ease of functionalization. This article reviews the most recent advances in graphene hybrid materials developed for gas sensing applications. In this review, synthetic approaches to fabricate graphene sensors, the nano structures of hybrid materials, and their sensing mechanism are presented. Future perspectives of this rapidly growing field are also discussed.Entities:
Keywords: gas sensors; graphene; hybrid materials
Year: 2015 PMID: 26690156 PMCID: PMC4721734 DOI: 10.3390/s151229814
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1(a) Schematic representation of fabricating a gas sensor based on rGO/nylon-6 nanofibers; (b) Optical images of the bare device (i), GO/nylon-6 coated, formation of GO network based on interwoven fibers (FGO) (ii), and rGO/nylon-6 sensing device, rGO gas sensors fabricated on electrospun nanofibers (FRGO) (iii); (c) SEM image of rGO nanofiber; (d) Sensing response of the devices based on FRGO as synthesized (blue line) and thermally treated FRGO at 300 °C (red line). {Reprinted with permission from [30], ©2014 Royal Society of Chemistry}.
Figure 2(a) Schematic illustration of the formation of Cu2O/MLG 3D nano-flowers; (b) Dynamic response-recovery curves of sensor device towards 97 ppm to 97 ppb NOx at room temperature. {Reprinted with permission from [54], © 2014 Royal Society of Chemistry}.
Figure 3(a) FESEM image of Cu2O mesocrystal with octahedron morphologies comprised of branched nanowires; (b) FESEM image of Cu2O-rGO mesocrystal; (c) The response of rGO, Cu2O NW, and Cu2O-rGO sensor devices under increasing NO2 exposure. {Reprinted with permission from [55], © 2012 American Chemical Society}.
Gas sensors based on graphene. G = Graphene; FET = field effect transistor; rGO = reduced graphene oxide; RT = room temperature; ppm = parts per million; ppt = parts per trillion.
| Sr. No. | Graphene Hybrid | Type of Sensor | Target Gas | Temperature (°C) | Detection Range (ppm) | LOD | Response (Sensitivity) | Response Time | Recovery Time | Reference |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | Epitaxial-G | Chemiresistor | NO2 | RT | 0.2 ppb–1 ppm | 0.6 ppt | − | − | − | [ |
| 2 | G-ozone treated | Chemiresistor | NO2 | RT | 0.2–200 | 1.3 ppb | 17% (200 ppm) | − | − | [ |
| 3 | G-exfoliated | Chemiresistor | NO2 | RT | 100 and 500 | − | 9% (100 ppm) | − | − | [ |
| 4 | G-nanomesh | Chemiresistor | NO2/NH3 | RT | 1–10/5–100 | 15/160 ppb | 4.32%/0.71% | 5–7 min/− | − | [ |
| 5 | rGO | FET | NH3 | 40–100 | 10–1000 | − | 1%–38% | ∼9–12 min | − | [ |
| 6 | G-microfiber | Optical | NH3 | − | 0–360 | 0.3 ppm | − | ∼0.4 s | − | [ |
| 7 | rGO | Chemiresistor | CO2 | RT | 0–1500 | − | 71% (1500 ppm) | ∼4 min | ∼4 min | [ |
| 8 | Graphene sheets | Conductivity sensor | CO2 | 22–60 | 10–100 | − | 9%–26% | 8 s | 10 s | [ |
| 9 | rGO | Chemiresistor | H2 | 30–300 | 200 | − | 6%–17% (200 ppm) | ∼11 s | ∼36 s | [ |
Gas sensors based on graphene polymer hybrids. G = Graphene; rGO = reduced grapheme; poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)(PEDOT:PSS); polypyrrole (PPy); poly(methyl methacrylate) (PMMA); RT = room temperature; PANI = polyaniline; PPD = p-phenylenediamine; DMMP = dimethyl methyl phosphonate.
| Sr. No. | Graphene Hybrid | Type of Sensor | Target Gas | Temperature | Detection Range (ppm) | LOD | Response (Sensitivity) | Response Time | Recovery Time | Reference |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | G-PEDOT-PSS | Chemiresistor | NH3 | RT | 5–1000 | <10 ppm | 1.2%–18.9% | ∼3 min | 5 min | [ |
| 2 | PMMA-rGO | SPR | NH3 | RT | 10–100 | − | − | <1 min | − | [ |
| 3 | PPy-rGO | Chemiresistor | NH3 | RT | 5 ppb–100 ppm | − | 22% (100 ppm) | − | 134–310 s | [ |
| 4 | PPy-rGO | Chemiresistor | NH3 | RT | 1 ppb–50 ppm | − | 2.4% (1 ppb) | 1.4 s | 76 s | [ |
| 5 | rGO-PANI | Chemiresistor | NH3 | RT | 20–50 | − | 37.1% (50 ppm) | 18 min | ∼2 min | [ |
| 6 | rGO | Chemiresistor | NH3 | RT | 5–50 | − | 10.7%–47.6% | 18 min | − | [ |
| 7 | rGO-PPy | Chemiresistor | NH3 | RT | 3–500 | 1.105%–34.73% | 400–147 s | − | [ | |
| 8 | PEDOT-rGO | Chemiresistor | NO2 | RT | 500 ppb–20 ppm | − | − | − | − | [ |
| 9 | rGO nanofiber | Chemiresistor | NO2 | RT | 0.25–4.5 | − | 7% (0.25 ppm) | − | − | [ |
| 10 | rGO-PPy | Chemiresistor | NO2 | RT | 1–50 | − | − | − | − | [ |
| 11 | G-Nylon 6 | Chemiresistor | N(CH3)3 | RT | 23–230 mg/L | 0.39 mg/L | 7.38% (45 mg/L) | 100 s | − | [ |
| 12 | rGO-PPD | Chemiresistor | DMMP | RT | 5–80 | − | 14.5% (80 ppm) | 18 min | 6 min | [ |
Gas sensors based on graphene metal/metal oxide hybrids. G = Graphene; rGO = reduced grapheme; eG = epitaxial grapheme; SLG = single-layer grapheme; GNR = graphene nanoribbons, RT = room temperature, Pt = Platinum, Pd = Palladium, Au = Gold, NPs = nanoparticles, NG = nitrogen doped graphene, PPy = polypyrrole, P3HT = poly(3-hexylthiophene), NW = nanowires, Cs = caesium, QDs = quantum dots.
| Sr. No. | Graphene hybrid | Type of Sensor | Target Gas | Temperature (°C) | Detection Range (ppm) | LOD | Response (Sensitivity) | Response Time | Recovery Time | Reference |
|---|---|---|---|---|---|---|---|---|---|---|
| 1 | PMMA-Pd NP-SLG | Chemiresistor | H2 | RT | 0.025%–2% | − | 66.37% (2% H2) | 1.81 min | 5.52 min | [ |
| 2 | Pd-GNR | Chemiresistor | H2 | RT | 30–1000 | − | 4.5% (1000 ppm) | 60 s | 90 s | [ |
| 3 | Pd-WO3-rGO | Chemiresistor | H2 | RT to 250 | 20–10,000 | − | − | <1 min | <1 min | [ |
| 4 | G-Pt/Pd | Chemiresistor | H2 | RT | 6–40,000 | 1 ppm | 36% (10,000 ppm (1%)) | 3 min | 1.2 min | [ |
| 5 | Pt-NG/Pt3Fe-NG | Chemiresistor | H2 | RT | 1%–4% | − | 47%/35% (4%) | 320 s/300 s | − | [ |
| 6 | G-ZnO | Chemiresistor | H2 | 150 | 10–500 | 10 ppm | 3.5 (200 ppm) | 22 s | 90 s | [ |
| 7 | rGO-SnO2 QDs | Chemiresistor | H2/LPG | 200/250 | 100–500 | − | 89.3%/92.4% (500 ppm) | ∼50–160 s/90–135 s | ∼100–160 s/90–160 s | [ |
| 8 | rGO-Pt | Chemiresistor | H2/NH3/NO | RT | 200–1000 | − | 14%/8%/10% (1000 ppm) | 2–6 min | 2–6 min | [ |
| 9 | GO-Au NPs | Optical | H2/CO/NO2 | 150 | 100 & 10,000/10,000/1 | − | 0.0007–0.004/–/0.0004 | 1–2/–/12 s | 2-4/–/15 s | [ |
| 10 | Ag-ZnO-rGO | Chemiresistor | C2H2 | 150 | 1–1000 | 1 ppm | 21.2 (100 ppm) | 25 s | 80 s | [ |
| 11 | SnO2-rGO | Chemiresistor | C2H2 | RT | 10–2000 | − | 2.19%–9.72% | 107–146 s | 95–141 s | [ |
| 12 | ZnO-G | Chemiresistor | CH2O | RT | 180 ppb–9 ppm | 180 ppb | 52% (9 ppm) | 36 s | − | [ |
| 13 | G-ZnFe2O4 | Chemiresistor | (CH3)2CO | 275 | 1–1000 | − | 1.5–9.1 | 0.73–10.59 s | 14.75–26.16 s | [ |
| 14 | G-ZnO | Chemiresistor | C2H5OH | 300 | 10–50 | − | 9–90 | − | − | [ |
| 15 | G-mica | FET | NH3 | RT and 100 | 20–100 | − | − | − | − | [ |
| 16 | SnO2-G | Chemiresistor | NH3 | RT | 10–50 | − | 15.9% (50 ppm) | <1 min | <1 min | [ |
| 17 | TiO2-PPy-G | Chemiresistor | NH3 | RT | 1–200 | − | 102.2% (50 ppm) | 36 s | 16 s | [ |
| 18 | ZnO-GO | Conductivity sensor | CO/NH3/NO | RT | − | − | 24.3/24/3.5% (22/1/5 ppm) | 5/6/25 min | 2–5/2–3 min | [ |
| 19 | Co(OH)2-rGO | Chemiresistor | NOx | RT | 970 ppb–97 ppm | 0.97 ppm | 70% (100 ppm) | − | − | [ |
| 20 | CuO-G | Chemiresistor | NOx | RT | 97 ppb–97 ppm | 97 ppb | 95.1% (97 ppm) | 9.6 s | − | [ |
| 21 | rGO-Cu2O | Chemiresistor | NO2 | RT | 0.4–2 | 64 ppb | 67.8% (2 ppm) | − | − | [ |
| 22 | In2O3-G | Chemiresistor | NO2 | RT | 5–100 | − | 8.25 (30 ppm) | 4 min | 24 min | [ |
| 23 | Co3O4-rGO | Chemiresistor | NO2 | RT | 60 | − | − | − | − | [ |
| CH3OH | RT | 300–1000 | − | − | ∼1–2 min | ∼1–2 min | ||||
| 24 | rGO-CNT-SnO2 | Chemiresistor | NO2 | RT | 1–100 | − | 2.53 (5 ppm) | 8 s | 77 s | [ |
| 25 | SnO2-rGO | Chemiresistor | NO2 | 50 | 0.5–500 | − | 3.31 (5 ppm) | 135 s | 200 s | [ |
| 26 | GO-Cs | Conductometric | NO2 | RT | 0.18–12.2 | 90 ppb | 0.7%–39.6% (0.18–12.2 ppm) | 4 min | − | [ |
| 27 | SnO2-rGO | Chemiresistor | NO2 | 22–70 | 14–110 | 2 ppm | 1.079 (100 ppm) at 55 °C | − | 373 s | [ |
| 28 | Fe2O3-G | Optical (CL) | H2S | 190 | 15 | <10 ppm | 450 au (15 ppm) | 500 µs | 30 s | [ |
| 29 | G-SnO2 | Chemiresistor | H2S | 260 | 1–50 | − | 2.1 (1 ppm) | 5 s | 10 s | [ |
| 30 | MoO3-rGO | Chemiresistor | H2S | 160 | 50–500 | − | 4120 (50 ppm) | 60 s | 120 s | [ |