| Literature DB >> 26676965 |
Bowen Zhu1, Hong Wang1, Yaqing Liu1, Dianpeng Qi1, Zhiyuan Liu1, Hua Wang1, Jiancan Yu1, Matthew Sherburne2, Zhaohui Wang3, Xiaodong Chen1.
Abstract
Skin-inspired haptic-memory devices, which can retain pressure information after the removel of external pressure by virtue of the nonvolatile nature of the memory devices, are achieved. The rise of haptic-memory devices will allow for mimicry of human sensory memory, opening new avenues for the design of next-generation high-performance sensing devices and systems.Entities:
Keywords: haptic memory devices; resistive switching memory; sensory memory; tactile sensing
Mesh:
Year: 2015 PMID: 26676965 DOI: 10.1002/adma.201504754
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849