| Literature DB >> 26675242 |
Michael D Thompson1, Aiyeshah Alhodaib1, Adam P Craig1, Alex Robson1, Atif Aziz1, Anthony Krier1, Johannes Svensson2, Lars-Erik Wernersson2, Ana M Sanchez3, Andrew R J Marshall1.
Abstract
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.Entities:
Keywords: InAsSb; Nanowires; midwavelength infrared; photodetector
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Year: 2015 PMID： 26675242 DOI： 10.1021/acs.nanolett.5b03449
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189