Literature DB >> 26666367

Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals.

Yu-Lin Tsai1, Che-Yu Liu2, Chirenjeevi Krishnan3, Da-Wei Lin2, You-Chen Chu2, Tzu-Pei Chen2, Tien-Lin Shen2, Tsung-Sheng Kao2, Martin D B Charlton3, Peichen Yu2, Chien-Chung Lin4, Hao-Chung Kuo2, Jr-Hau He5.   

Abstract

Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is the so-called "green gap". In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boost the light extraction efficiency of LEDs with an enhancement of 78% but also collimate the view angle of LEDs from 131.5° to 114.0°. This could be because of the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs point the way towards a promising avenue of solid-state lighting.

Entities:  

Year:  2016        PMID: 26666367     DOI: 10.1039/c5nr05555e

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.

Authors:  Hongpo Hu; Shengjun Zhou; Hui Wan; Xingtong Liu; Ning Li; Haohao Xu
Journal:  Sci Rep       Date:  2019-03-05       Impact factor: 4.379

2.  An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.

Authors:  Mengling Liu; Jie Zhao; Shengjun Zhou; Yilin Gao; Jinfeng Hu; Xingtong Liu; Xinghuo Ding
Journal:  Nanomaterials (Basel)       Date:  2018-06-21       Impact factor: 5.076

3.  The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.

Authors:  Shengjun Zhou; Xingtong Liu; Han Yan; Yilin Gao; Haohao Xu; Jie Zhao; Zhijue Quan; Chengqun Gui; Sheng Liu
Journal:  Sci Rep       Date:  2018-07-23       Impact factor: 4.379

  3 in total

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