Rational Design of Ultralarge Pb1-x Snx Te Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport.

Ultralarge topological crystalline insulator Pb1-x Snx Te nanoplates are developed by controlling substrate surface chemical properties in a cost-efficient chemical vapor deposition (CVD) process. Dominant topological surface transport is demonstrated by a gate-voltage-controlled weak (anti)localization effect, indicating the potential application of these nanoplates to low-dissipation topological transistors.