Literature DB >> 26618443

Interface effects on acceptor qubits in silicon and germanium.

J C Abadillo-Uriel1, M J Calderón.   

Abstract

Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement, the dielectric mismatch and the central cell effects. The presence of an interface puts constraints to the allowed symmetries and leads to the splitting of the ground state in two Kramers doublets (Mol et al 2015 Appl. Phys. Lett. 106 203110). Inversion symmetry breaking also implies parity mixing which affects the allowed optical transitions. Consequences for acceptor qubits are discussed.

Entities:  

Year:  2015        PMID: 26618443     DOI: 10.1088/0957-4484/27/2/024003

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

Authors:  Joost van der Heijden; Takashi Kobayashi; Matthew G House; Joe Salfi; Sylvain Barraud; Romain Laviéville; Michelle Y Simmons; Sven Rogge
Journal:  Sci Adv       Date:  2018-12-07       Impact factor: 14.136

  1 in total

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