Resonant energy transfer between patterned InGaN/GaN quantum wells and CdSe/ZnS quantum dots.

We explore an easy method for preparation of a hybrid device of a photonic crystal InGaN/GaN quantum well (QW) and colloidal quantum dots using conventional photolithography. It is demonstrated from electroluminescence spectra that Förster resonance energy transfer takes place efficiently between the photonic crystal InGaN/GaN QW and CdSe/ZnS colloidal quantum dots. From the photoluminescence decay of the InGaN/GaN QW, the largest Förster resonance energy transfer efficiency between the photonic crystal GaN quantum well and colloidal quantum dots is measured as 88% and the corresponding Förster-resonance-energy-transfer fraction reached 42%. An easy approach is explored to realize a highly efficient electrically driven colloidal quantum dot device using the Förster-resonance-energy-transfer mechanism.