| Literature DB >> 26606502 |
Chang Won Ahn1, Gantsooj Amarsanaa1, Sung Sik Won1, Song A Chae1, Dae Su Lee1, Ill Won Kim1.
Abstract
We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb(0.97)Y(0.02)[(Zr(0.6)Sn(0.4))(0.925)Ti(0.075)]O3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U(reco) = 21.0 J/cm(3) with a high energy-storage efficiency of η = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles.Entities:
Keywords: antiferroelectrics; energy storage; fatigue; solid-state dielectric capacitors; thin-films
Year: 2015 PMID： 26606502 DOI： 10.1021/acsami.5b08786
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229