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Literature DB >> 26603698

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

Zhihao Yu¹, Zhun-Yong Ong², Yiming Pan³, Yang Cui¹, Run Xin¹, Yi Shi¹, Baigeng Wang³, Yun Wu⁴, Tangsheng Chen⁴, Yong-Wei Zhang², Gang Zhang², Xinran Wang¹.

Abstract

By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.

Keywords: interface; mobility; molybdenum disulfide (MoS2); phonon transport

Year: 2015 PMID： 26603698 DOI： 10.1002/adma.201503033

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

15 in total

1. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire.

Authors: Lei Liu; Taotao Li; Liang Ma; Weisheng Li; Si Gao; Wenjie Sun; Ruikang Dong; Xilu Zou; Dongxu Fan; Liangwei Shao; Chenyi Gu; Ningxuan Dai; Zhihao Yu; Xiaoqing Chen; Xuecou Tu; Yuefeng Nie; Peng Wang; Jinlan Wang; Yi Shi; Xinran Wang
Journal: Nature Date: 2022-05-04 Impact factor: 49.962

2. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

Authors: James L Doherty; Steven G Noyce; Zhihui Cheng; Hattan Abuzaid; Aaron D Franklin
Journal: ACS Appl Mater Interfaces Date: 2020-07-27 Impact factor: 9.229

3. Transfer of monolayer TMD WS₂ and Raman study of substrate effects.

Authors: Jerome T Mlack; Paul Masih Das; Gopinath Danda; Yung-Chien Chou; Carl H Naylor; Zhong Lin; Néstor Perea López; Tianyi Zhang; Mauricio Terrones; A T Charlie Johnson; Marija Drndić
Journal: Sci Rep Date: 2017-02-21 Impact factor: 4.379

4. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

Authors: Md Hasibul Alam; Zifan Xu; Sayema Chowdhury; Zhanzhi Jiang; Deepyanti Taneja; Sanjay K Banerjee; Keji Lai; Maria Helena Braga; Deji Akinwande
Journal: Nat Commun Date: 2020-06-24 Impact factor: 14.919

Review 5. Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective.

Authors: Showkat Hassan Mir; Vivek Kumar Yadav; Jayant Kumar Singh
Journal: ACS Omega Date: 2020-06-11

Review 6. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Authors: Sohail Ahmed; Jiabao Yi
Journal: Nanomicro Lett Date: 2017-08-16

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

1. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire.

2. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

3. Transfer of monolayer TMD WS₂ and Raman study of substrate effects.

4. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

Review 5. Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective.

Review 6. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Review 7. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides.

8. From Two- to Three-Dimensional van der Waals Layered Structures of Boron Crystals: An Ab Initio Study.

Review 9. Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.

10. Room-Temperature Production of Nanocrystalline Molybdenum Disulfide (MoS₂) at the Liquid-Liquid Interface.

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

1. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire.

2. Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors.

3. Transfer of monolayer TMD WS2 and Raman study of substrate effects.

4. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

Review 5. Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective.

Review 6. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Review 7. Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides.

8. From Two- to Three-Dimensional van der Waals Layered Structures of Boron Crystals: An Ab Initio Study.

Review 9. Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.

10. Room-Temperature Production of Nanocrystalline Molybdenum Disulfide (MoS2) at the Liquid-Liquid Interface.

2. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

3. Transfer of monolayer TMD WS₂ and Raman study of substrate effects.

10. Room-Temperature Production of Nanocrystalline Molybdenum Disulfide (MoS₂) at the Liquid-Liquid Interface.