Literature DB >> 26585229

Photon upconversion in degenerately sulfur doped InP nanowires.

K Mergenthaler1, S Lehmann1, J Wallentin2, W Zhang3, M T Borgström1, A Yartsev3, M-E Pistol1.   

Abstract

Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to high |k|-values, and the temperature dependence of this process is measured. We show that hole relaxation via phonon scattering can be observed in continuous wave excitation luminescence measurements.

Entities:  

Year:  2015        PMID: 26585229     DOI: 10.1039/c5nr05472a

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  1 in total

1.  Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors.

Authors:  K Mergenthaler; N Anttu; N Vainorius; M Aghaeipour; S Lehmann; M T Borgström; L Samuelson; M-E Pistol
Journal:  Nat Commun       Date:  2017-11-21       Impact factor: 14.919

  1 in total

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