| Literature DB >> 26575976 |
Zhenyu Yang1, Oleksandr Voznyy1, Mengxia Liu1, Mingjian Yuan1, Alexander H Ip1, Osman S Ahmed1, Larissa Levina1, Sachin Kinge2, Sjoerd Hoogland1, Edward H Sargent1.
Abstract
Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.Entities:
Keywords: carrier transport layers; colloidal quantum dots; infrared light emission; light-emitting diodes
Year: 2015 PMID: 26575976 DOI: 10.1021/acsnano.5b05617
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881