| Literature DB >> 26573767 |
Fabrizio Torricelli1,2, Matteo Ghittorelli1, Edsger C P Smits3, Christian W S Roelofs2,4, René A J Janssen2, Gerwin H Gelinck2,3, Zsolt M Kovács-Vajna1, Eugenio Cantatore2.
Abstract
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.Entities:
Keywords: ambipolar semiconductors; complementary electronics, electronic memory; polymer transistors
Year: 2015 PMID: 26573767 DOI: 10.1002/adma.201503414
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849