Literature DB >> 26568333

Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias.

Shusuke Kasamatsu1, Satoshi Watanabe2, Cheol Seong Hwang3, Seungwu Han4.   

Abstract

The emergence of negative capacitance in an ultrathin ferroelectric/paraelectric bilayer capacitor under electrical bias is examined using first-principles simulation. An antiferroelectric-like behavior is predicted, and negative capacitance is shown to emerge when the monodomain state becomes stable after bias application. The polydomain-monodomain transition is also shown to be a source of capacitance enhancement.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  ferroelectric; first principles; negative capacitance

Year:  2015        PMID: 26568333     DOI: 10.1002/adma.201502916

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  4 in total

1.  Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Authors:  Michael Hoffmann; Zheng Wang; Nujhat Tasneem; Ahmad Zubair; Prasanna Venkatesan Ravindran; Mengkun Tian; Anthony Arthur Gaskell; Dina Triyoso; Steven Consiglio; Kandabara Tapily; Robert Clark; Jae Hur; Sai Surya Kiran Pentapati; Sung Kyu Lim; Milan Dopita; Shimeng Yu; Winston Chern; Josh Kacher; Sebastian E Reyes-Lillo; Dimitri Antoniadis; Jayakanth Ravichandran; Stefan Slesazeck; Thomas Mikolajick; Asif Islam Khan
Journal:  Nat Commun       Date:  2022-03-09       Impact factor: 14.919

2.  Observation of negative capacitance in antiferroelectric PbZrO3 Films.

Authors:  Leilei Qiao; Cheng Song; Yiming Sun; Muhammad Umer Fayaz; Tianqi Lu; Siqi Yin; Chong Chen; Huiping Xu; Tian-Ling Ren; Feng Pan
Journal:  Nat Commun       Date:  2021-07-09       Impact factor: 14.919

3.  Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

Authors:  Yu Jin Kim; Min Hyuk Park; Young Hwan Lee; Han Joon Kim; Woojin Jeon; Taehwan Moon; Keum Do Kim; Doo Seok Jeong; Hiroyuki Yamada; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-01-08       Impact factor: 4.379

Review 4.  Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Authors:  Eunah Ko; Jaemin Shin; Changhwan Shin
Journal:  Nano Converg       Date:  2018-01-28
  4 in total

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