| Literature DB >> 26567761 |
Eunpa Kim1, Changhyun Ko2, Kyunghoon Kim3, Yabin Chen2, Joonki Suh2, Sang-Gil Ryu1, Kedi Wu4, Xiuqing Meng2,4,5, Aslihan Suslu4, Sefaattin Tongay4, Junqiao Wu2,6, Costas P Grigoropoulos1.
Abstract
Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.Entities:
Keywords: 2D materials; field-effect transistors; laser-assisted doping; site selective; transition metal dichalcogenide
Year: 2015 PMID: 26567761 DOI: 10.1002/adma.201503945
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849