Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition.

The radiation-induced photoluminescence (PL) properties of Bi/Al-codoped silica optical fibers were investigated. The Bi/Al-related materials were doped into fiber core via atomic layer deposition. The pristine fiber samples were irradiated with different doses, and its absorption and PL properties were studied. A new absorption peak appeared at approximately 580 nm, and the intensity of absorption peaks is increased with the increasing of radiation doses. When the fiber samples were excited with a 532 nm pump, the intensity of the near infrared fluorescence decreased lightly. However, when the fiber samples were excited with a 980 nm pump the intensity of the fluorescence increased significantly with the increase of radiation doses (0-2.0 kGy). The intensity of fluorescence decreased when the radiation doses were increased up to 3.0 kGy. furthermore, the fluorescence intensity of the 1410 nm band increased much more than that the 1150 nm band. In addition, the microstructural characteristics of the Bi/Al-codoped silica optical fibers were analyzed using electron spin resonance (ESR). Many radiation-induced defect centers were present, and the intensity of the ESR signals also increased with the increase of radiation doses. The photoluminescence properties and microstructural characteristics were related in the radiated Bi-related silica optical fibers. A possible underlying mechanism for the radiation-induced photoluminescence enhancement process in the Bi/Al-doped silica fiber is discussed.