Literature DB >> 26554897

Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS₂.

Luyi Yang1, Weibing Chen2, Kathleen M McCreary3, Berend T Jonker3, Jun Lou2, Scott A Crooker1.   

Abstract

We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS2. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond time scale Larmor spin precession signal commensurate with g-factor |g0| ≃ 1.86 is observed in several different MoS2 samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a subensemble of localized electron spins having an inhomogeneously broadened distribution of g-factors, g0 + Δg. In contrast to g0, Δg is sample-dependent and ranges from 0.042 to 0.115.

Entities:  

Keywords:  2D Semiconductor; dichalcogenide; monolayer MoS2; spin coherence

Year:  2015        PMID: 26554897     DOI: 10.1021/acs.nanolett.5b03771

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Ultrafast pseudospin quantum beats in multilayer WSe2 and MoSe2.

Authors:  Simon Raiber; Paulo E Faria Junior; Dennis Falter; Simon Feldl; Petter Marzena; Kenji Watanabe; Takashi Taniguchi; Jaroslav Fabian; Christian Schüller
Journal:  Nat Commun       Date:  2022-08-25       Impact factor: 17.694

2.  Hyperfine interaction in atomically thin transition metal dichalcogenides.

Authors:  Ivan D Avdeev; Dmitry S Smirnov
Journal:  Nanoscale Adv       Date:  2019-05-13

3.  Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors.

Authors:  Yuhei Miyauchi; Satoru Konabe; Feijiu Wang; Wenjin Zhang; Alexander Hwang; Yusuke Hasegawa; Lizhong Zhou; Shinichiro Mouri; Minglin Toh; Goki Eda; Kazunari Matsuda
Journal:  Nat Commun       Date:  2018-07-03       Impact factor: 14.919

  3 in total

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