| Literature DB >> 26554897 |
Luyi Yang1, Weibing Chen2, Kathleen M McCreary3, Berend T Jonker3, Jun Lou2, Scott A Crooker1.
Abstract
We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS2. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond time scale Larmor spin precession signal commensurate with g-factor |g0| ≃ 1.86 is observed in several different MoS2 samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a subensemble of localized electron spins having an inhomogeneously broadened distribution of g-factors, g0 + Δg. In contrast to g0, Δg is sample-dependent and ranges from 0.042 to 0.115.Entities:
Keywords: 2D Semiconductor; dichalcogenide; monolayer MoS2; spin coherence
Year: 2015 PMID: 26554897 DOI: 10.1021/acs.nanolett.5b03771
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189