Literature DB >> 26542882

Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection.

Zhiming Huang1,2, Wei Zhou1, Jinchao Tong1, Jingguo Huang1, Cheng Ouyang1, Yue Qu1, Jing Wu1, Yanqing Gao1, Junhao Chu1.   

Abstract

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  electromagnetic induced wells; photoelectric effect; terahertz detection

Year:  2015        PMID： 26542882     DOI： 10.1002/adma.201503350

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  2 in total

1.  Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave.

Authors:  Wanli Ma; Yanqing Gao; Liyan Shang; Wei Zhou; Niangjuan Yao; Lin Jiang; Qinxi Qiu; Jingbo Li; Yi Shi; Zhigao Hu; Zhiming Huang
Journal:  Adv Sci (Weinh)       Date:  2021-12-19       Impact factor: 16.806

2.  High sensitivity of room-temperature terahertz photodetector based on silicon.

Authors:  Qinxi Qiu; Wanli Ma; Jingbo Li; Lin Jiang; Wangchen Mao; Xuehui Lu; Niangjuan Yao; Yi Shi; Zhiming Huang
Journal:  iScience       Date:  2022-09-26
  2 in total

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