Literature DB >> 26540229

Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric-Field-Induced Competing Anisotropies.

Aitian Chen1,2, Yonggang Zhao1,2, Peisen Li1,2,3, Xu Zhang4, Renci Peng5, Haoliang Huang6, Lvkuan Zou4, Xiaoli Zheng4, Sen Zhang7, Peixian Miao1,2, Yalin Lu6, Jianwang Cai4, Ce-Wen Nan5.   

Abstract

The combination of exchange-biased systems and ferroelectric materials offers a simple and effective way to investigate the angular dependence of exchange bias using one sample with electric-field-induced competing anisotropies. A reversible electric-field-controlled magnetization reversal at zero magnetic field is also realized through optimizing the anisotropy configuration, holding promising applications for ultralow power magnetoelectric devices.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  angular dependence; competing anisotropies; exchange bias; ferroelectric materials; magnetization reversal; magnetoelectric devices

Year:  2015        PMID： 26540229     DOI： 10.1002/adma.201503176

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  6 in total

1.  Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Authors:  Peisen Li; Yonggang Zhao; Sen Zhang; Aitian Chen; Dalai Li; Jing Ma; Yan Liu; Daniel T Pierce; John Unguris; Hong-Guang Piao; Huiyun Zhang; Meihong Zhu; Xiaozhong Zhang; Xiufeng Han; Mengchun Pan; Ce-Wen Nan
Journal:  ACS Appl Mater Interfaces       Date:  2017-01-09       Impact factor: 9.229

2.  Giant spontaneous exchange bias triggered by crossover of superspin glass in Sb-doped Ni50Mn38Ga12 Heusler alloys.

Authors:  Fanghua Tian; Kaiyan Cao; Yin Zhang; Yuyang Zeng; Rui Zhang; Tieyan Chang; Chao Zhou; Minwei Xu; Xiaoping Song; Sen Yang
Journal:  Sci Rep       Date:  2016-08-01       Impact factor: 4.379

3.  Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling.

Authors:  Aitian Chen; Yan Wen; Bin Fang; Yuelei Zhao; Qiang Zhang; Yuansi Chang; Peisen Li; Hao Wu; Haoliang Huang; Yalin Lu; Zhongming Zeng; Jianwang Cai; Xiufeng Han; Tom Wu; Xi-Xiang Zhang; Yonggang Zhao
Journal:  Nat Commun       Date:  2019-01-16       Impact factor: 14.919

4.  Full voltage manipulation of the resistance of a magnetic tunnel junction.

Authors:  Aitian Chen; Yuelei Zhao; Yan Wen; Long Pan; Peisen Li; Xi-Xiang Zhang
Journal:  Sci Adv       Date:  2019-12-13       Impact factor: 14.136

5.  Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions.

Authors:  Jhen-Yong Hong; Chen-Feng Hung; Kui-Hon Ou Yang; Kuan-Chia Chiu; Dah-Chin Ling; Wen-Chung Chiang; Minn-Tsong Lin
Journal:  Sci Rep       Date:  2021-03-16       Impact factor: 4.379

6.  Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure.

Authors:  Yuanjun Yang; Zhenlin Luo; Shutong Wang; Wenyu Huang; Guilin Wang; Cangmin Wang; Yingxue Yao; Hongju Li; Zhili Wang; Jingtian Zhou; Yongqi Dong; Yong Guan; Yangchao Tian; Ce Feng; Yonggang Zhao; Chen Gao; Gang Xiao
Journal:  iScience       Date:  2021-06-17
  6 in total

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