| Literature DB >> 26500160 |
He Tian1, Haiming Zhao1, Xue-Feng Wang1, Qian-Yi Xie1, Hong-Yu Chen2, Mohammad Ali Mohammad1, Cheng Li1, Wen-Tian Mi1, Zhi Bie1, Chao-Hui Yeh3, Yi Yang1, H-S Philip Wong2, Po-Wen Chiu3, Tian-Ling Ren1.
Abstract
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.Entities:
Keywords: bilayer graphene; gate controlled; in situ; resistive memory; switching windows
Year: 2015 PMID： 26500160 DOI： 10.1002/adma.201503125
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849