| Literature DB >> 26497945 |
Kai Xu1, Zhenxing Wang1, Feng Wang1, Yun Huang1, Fengmei Wang1, Lei Yin1, Chao Jiang1, Jun He1.
Abstract
An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.Entities:
Keywords: HfS2; flake thickness; metal contacts; phototransistors; responsivity
Year: 2015 PMID: 26497945 DOI: 10.1002/adma.201503864
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849