| Literature DB >> 26497729 |
Xiaoxu Liu1,2,3, Dongliang Chao2, Qiang Zhang1, Hai Liu4, Hailong Hu2, Jiupeng Zhao3, Yao Li3, Yizhong Huang4, Jianyi Lin2, Ze Xiang Shen2.
Abstract
A stable Si-based anode with a high initial coulombic efficiency (ICE) forEntities:
Year: 2015 PMID: 26497729 PMCID: PMC4620504 DOI: 10.1038/srep15665
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Schematic fabrication process for the mSi@NG composite: (a) mSi and GGO in an aqueous solution. (b) Optical micrograph of the giant graphene platelets. (c,d) freestanding mSi@GGO composite after freeze-drying. (e–g) Freestanding mSi@GNG composite film after hydrazine reduction.
Figure 2Electrochemical properties: (a) Initial charge-discharge curves of pure mSi, pure GNG and mSi@GNG anode with 50% Si at 0.1 A g−1 (insets are the enlarged discharge curves of each electrode). (b) The initial coulombic efficiency of Si and graphene composite reported recently compared to mSi@GNG composite film electrode. (c) Cycling performance of discharge capacity and coulombic efficiency of the mSi@GNG composite film electrodes and pure mSi electrode at 500 mA g−1. (d) CV curves of the 1st and 2nd cycles of the mSi@GNG composite and pure mSi electrode. (e) The 1st and 2nd charge–discharge curves at 0.1 A g−1 for mSi@GNG composite. (f) Nyquist plots of pure mSi and mSi@GNG electrodes.
Figure 3Raman spectra of electrode before and after cycling: (a) Raman spectra using 532 nm laser for pristine mSi@GNG film, and cycled mSi and mSi@GNG samples. (b) UV resonant Raman spectra using ultraviolet laser (325 nm) for the pristine mSi@GNG film, cycled mSi and mSi@GNG samples. (c) Enlarged Raman spectra of Fig. 3b. (d) Raman mapping of mSi@GNG. (e) Raman mapping of cycled mSi@GNG, integrated from 450–550 cm−1, showing as the yellow points. (f) Raman mapping of cycled mSi, integrated from 450–550 cm−1.
Figure 4SEM and TEM images of electrodes: (a) Photographs of free standing mSi@GNG films. (b) Focused Ion Beam (FIB) image of mSi@GNG sample at 52°. (c,d) SEM images of the mSi@GNG film. (e) Photographs of mSi@NG films after 80 cycles. (f,h) SEM images of mSi@GNG and mSi electrode after 80 cycles, respectively. (g) FIB-prepared cross section image of mSi@GNG. The Pt coating was deposited to protect the mSi@GNG from ion bombard damage. (i) TEM image made by FIB cutting of mSi@GNG electrode after cycles, scale bar: 1 μm. (j) Corresponding elements mapping of Si (yellow), O (red) and C (white). (k–m) element mapping of Si, O, C, respectively.
Figure 5Mechanism of lithium ion storage on pure mSi and mSi@GNG: (a) pure mSi particle and conducting additives (e.g. carbon black). (b) SEI formation on the surface of pure mSi particles, occurring between 0.7 and 0.05 V during the initial discharge process. (c) Further lithiation at 0.05 V. Inhomogeneous point contact between mSi and conducting additives could cause non-uniform lithiation, resulting in stress concentration and the coexistence of c-mSi and meta-stable c-Li15Si4. (d) Broken lithiated mSi due to crystallization of Li15Si4 and stress-caused cracking after cycles. (e) mSi particle and GNG. (f) SEI formation on the surface of NG, occurring 1.1 V during the initial discharge process. (g) Further lithiation at 0.05 V. homogeneous contact between mSi and GNG could cause uniform lithiation. (h) Lithiated mSi@GNG due to no crystallization of Li15Si4 and no cracking after cycles.