| Literature DB >> 26486278 |
Shijian Zheng1,2, Shuai Shao1, Jian Zhang1,3, Yongqiang Wang1, Michael J Demkowicz4, Irene J Beyerlein1, Nathan A Mara1.
Abstract
Interface engineering has become an important strategy for designing radiation-resistant materials. Critical to its success is fundamental understanding of the interactions between interfaces and radiation-induced defects, such as voids. Using transmission electron microscopy, here we report an interesting phenomenon in their interaction, wherein voids adhere to only one side of the bimetal interfaces rather than overlapping them. We show that this asymmetrical void-interface interaction is a consequence of differing surface energies of the two metals and non-uniformity in their interface formation energy. Specifically, voids grow within the phase of lower surface energy and wet only the high-interface energy regions. Furthermore, because this outcome cannot be accounted for by wetting of interfaces with uniform internal energy, our report provides experimental evidence that bimetal interfaces contain non-uniform internal energy distributions. This work also indicates that to design irradiation-resistant materials, we can avoid void-interface overlap via tuning the configurations of interfaces.Entities:
Year: 2015 PMID: 26486278 PMCID: PMC4614025 DOI: 10.1038/srep15428
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Adhesion of voids to Cu-Ag interface.
Over-focus (+1.5 μm) TEM image of the Cu-Ag composite after He irradiation at 450 °C. Voids are represented by regions of dark contrast.
Figure 2Surface wetting of interfaces with uniform energies.
(a) Schematic of wetting on surfaces with uniform energy; (b) void wetting of a coherent (111)Ag twin boundary.
Figure 3Cu-Ag interface structures.
(a) TEM micrograph showing the Cu-Ag composite before He irradiation; (b) cube-on-cube and (c) hetero-twin Cu-Ag interface.
Figure 4Adhesion of voids to MDIs at Cu-Ag interfaces.
(a) Bright field TEM image and (c) dark field TEM image of a Cu-Ag interface under a two beam condition shown in (b) and at an under-focus of −1.5 μm.
Figure 5Void wetting of Cu-Ag interfaces with non-uniform structures and energies.
(a) Misfit dislocation network in the cube-on-cube Cu-Ag interface. Atoms shown are on the Cu side of the interface and colored by coordination number. (b) Contour plot of the location-dependent interface energy of a Cu-Ag interface. Black contours correspond to zero wetting energy. (c) Schematic of a void wetting a single MDI where W > 0 at a Cu-Ag interface.