| Literature DB >> 26478839 |
Bassam Alameddine1, Andrew H Rice2, Christine Luscombe2, Titus A Jenny3.
Abstract
We report the versatile synthesis of two tribenzo[fj,ij,rst]pentaphene (TBP) derivatives bearing two diarylamine substituents attached at the opposite ends of the aromatic core. Field effect transistor (FET) devices of the bis-diarylamine-TBP compounds were fabricated using spin coating under different concentrations, spin speed, and solvent conditions. Emission spectra and surface investigation by atomic force microscopy (AFM) reveal the formation of aggregates induced by the strong π-π stacking of the aromatic core leading to island features, and thus, unexpected low hole mobilities. The synthetic strategy we show herein, however, offers the possibility to decorate the TBP core structure with various charge-carrier peripheral groups and optimized alkyl chains, which should improve the crystalline property of their thin films upon deposition, leading consequently to a better hole transport mobility.Entities:
Keywords: Pi interactions; conducting materials; cross-coupling; fused-ring systems; thin films
Year: 2015 PMID: 26478839 PMCID: PMC4603405 DOI: 10.1002/open.201500064
Source DB: PubMed Journal: ChemistryOpen ISSN: 2191-1363 Impact factor: 2.911
Figure 1a) MALDI-ICR spectrum of 1 a in DCTB; inset: measured (up) and calculated isotopic pattern (down), calculated for C78H82N2+. b) MALDI-ICR spectrum of 1 b in DCTB; inset: measured (up) and calculated isotopic pattern (down), calculated for C110H146N2+.
Figure 2Normalized absorption (red) and emission (green) spectra of the tribenzopentaphene derivatives in toluene: a) emission (c=10−7 m, λex=302 nm) of 1 a, b) emission (c=10−8 m, λex=309 nm) of 1 b. Emission spectra were measured with a maximum intensity (internal scale) of 780 and 440, for 1 a and 1 b, respectively.
DFT calculations (B3LYP at the 6-31G* level) of several TBP derivatives disubstituted at their opposite ends.
| Tribenzopentaphene (TBP) (3,12-disubstituted) | |||||||
|---|---|---|---|---|---|---|---|
| Parent | Diethyl | Di-NMe2 | NMe2, NMePh | Di-NMePh | Di-NPh2 | Di-NTolyl2 | |
| HOMO (eV) | −5.32 | −5.21 | −4.54 | −4.59 | −4.65 | −4.73 | −4.59 |
| LUMO (eV) | −1.54 | −1.47 | −1.16 | −1.23 | −1.31 | −1.47 | −1.38 |
| Gap | 3.78 | 3.74 | 3.38 | 3.36 | 3.34 | 3.26 | 3.21 |
| 362.32[a] | 363.88[a] | 408.61 | 410.67 | 411.32 | 425.87 | 433.29 | |
| — | 395 | — | — | — | 429 | 435 | |
[a] very weak transition.
Thin film spin-coating conditions, their root mean square (RMS) surface roughness, and FET mobilities.
| Entry | PAH | Solv. | Conc. [10−4 | Spin speed [rpm] | RMS roughness [nm] | Mobility [cm2 V−1 s−1] |
|---|---|---|---|---|---|---|
| 1 | 1 a | toluene | 4.5 | 2500 | 19.7 | n.a. |
| 2 | 1 a | toluene | 4.5 | 4000 | 18.4 | n.a. |
| 3 | 1 b | toluene | 4.5 | 4000 | 1.9 | 8.3×10−9 |
| 4 | 1 a | toluene | 4.5 | 5000 | 21.4 | n.a. |
| 5 | 1 a | toluene | 2.0 | 4000 | 14.5 | n.a. |
| 6 | 1 b | toluene | 2.0 | 4000 | 1.2 | 3.4×10−8 |
| 7 | 1 a | toluene | 0.5 | 4000 | 13.2 | n.a. |
| 8 | 1 a | DCB | 2.0 | 4000 | 22.7 | n.a. |
| 9 | 1 b | DCB | 2.0 | 4000 | 2.3 | 7.9×10−9 |
n.a.: not applicable
Figure 3AFM topography image of a thin film prepared by spin-coating at 4000 rpm of a a) 0.5×10−4 m 1 a in toluene b) 2×10−4 m 1 a in o-dichlorobenzene c) 2×10−4 m 1 b in toluene, and d) its transfer characteristic curves (gate-source voltage, VGS=+80 to −80 V).