| Literature DB >> 26456484 |
Michael Lübben1, Panagiotis Karakolis2, Vassilios Ioannou-Sougleridis2, Pascal Normand2, Panagiotis Dimitrakis2, Ilia Valov1.
Abstract
By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.Entities:
Keywords: electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories
Year: 2015 PMID： 26456484 DOI： 10.1002/adma.201502574
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849