Literature DB >> 26455916

Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.

Thomas Rembert1,2, Corsin Battaglia1,2, André Anders3, Ali Javey1,2.   

Abstract

A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  flexible electronics; metal oxides; thin-film transistors; transparent electronics

Year:  2015        PMID: 26455916     DOI: 10.1002/adma.201502159

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

1.  Synthesis of Mg and Zn diolates and their use in metal oxide deposition.

Authors:  Peter Frenzel; Andrea Preuß; Jörn Bankwitz; Colin Georgi; Fabian Ganss; Lutz Mertens; Stefan E Schulz; Olav Hellwig; Michael Mehring; Heinrich Lang
Journal:  RSC Adv       Date:  2019-04-05       Impact factor: 4.036

2.  Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

Authors:  Jae Sang Heo; Seungbeom Choi; Jeong-Wan Jo; Jingu Kang; Ho-Hyun Park; Yong-Hoon Kim; Sung Kyu Park
Journal:  Materials (Basel)       Date:  2017-06-03       Impact factor: 3.623

3.  All-Aluminum Thin Film Transistor Fabrication at Room Temperature.

Authors:  Rihui Yao; Zeke Zheng; Yong Zeng; Xianzhe Liu; Honglong Ning; Shiben Hu; Ruiqiang Tao; Jianqiu Chen; Wei Cai; Miao Xu; Lei Wang; Linfeng Lan; Junbiao Peng
Journal:  Materials (Basel)       Date:  2017-02-23       Impact factor: 3.623

  3 in total

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