| Literature DB >> 26451625 |
Jian Wang1, Liang Xu1, Yun-Ju Lee1, Manuel De Anda Villa1, Anton V Malko1, Julia W P Hsu1.
Abstract
Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron-exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer doping low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. These understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.Keywords: Fermi level pinning; capacitance−voltage; charge transfer; polaron−exciton quenching; recombination
Year: 2015 PMID: 26451625 DOI: 10.1021/acs.nanolett.5b03473
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189